PART |
Description |
Maker |
1214-800P |
Pulsed Power L-Band (Si)
|
Microsemi
|
1214-550P |
Pulsed Power L-Band (Si)
|
Microsemi
|
1014-6A |
Pulsed Power L-Band (Si)
|
Microsemi
|
3134-100M |
Pulsed Power S-Band (Si)
|
Microsemi
|
3134-180P |
Pulsed Power S-Band (Si)
|
Microsemi
|
TAN350 |
350 Watts, 50 Volts, Pulsed Avionics 960 1215 MHz 350瓦,50伏特,脉冲航空电601215兆赫 TACAN 960-1215 MHz, Class C, Common Base, Pulsed; P(out) (W): 350; P(in) (W): 70; Gain (dB): 7; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR 350 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz
|
Electronic Theatre Controls, Inc. Microsemi, Corp. ETC[ETC] List of Unclassifed Manufacturers
|
RFHA1020 |
280W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
MDS150 |
150 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 150; P(in) (W): 20; Gain (dB): 10; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55AW-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi Corporation Microsemi, Corp.
|
HVV1214-075 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200レs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
1214-550P |
550 Watts - 300楼矛s, 10%, 42V L-Band Pulsed Radar 1200 - 1400 MHz 550 Watts - 300μs, 10%, 42V L-Band Pulsed Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
PH1214-20EL |
Radar Pulsed Power Transistor, 20W, 2ms Pulse, 10% Duty 1.2 - 1.4 GHz Radar Pulsed Poewr Transistor20W 雷达脉冲Poewr晶体管,20
|
Tyco Electronics Rhopoint Components, Ltd.
|
|